Add Excessive Bandwidth Memory
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<br>High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. RAM in upcoming CPUs, and FPGAs and in some supercomputers (such as the NEC SX-Aurora TSUBASA and Fujitsu A64FX). HBM achieves larger bandwidth than DDR4 or GDDR5 while utilizing less energy, and in a considerably smaller form factor. That is achieved by stacking as much as eight DRAM dies and an optionally available base die which may embody buffer circuitry and test logic. The stack is usually linked to the memory controller on a GPU or CPU by a substrate, equivalent to a silicon interposer. Alternatively, the memory die may very well be stacked straight on the CPU or GPU chip. Throughout the stack the dies are vertically interconnected by by means of-silicon vias (TSVs) and microbumps. The HBM know-how is comparable in precept however incompatible with the Hybrid Memory Cube (HMC) interface developed by Micron Technology. HBM memory bus could be very vast compared to different DRAM recollections reminiscent of DDR4 or GDDR5.<br>
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<br>An HBM stack of four DRAM dies (4-Hi) has two 128-bit channels per die for a total of eight channels and a width of 1024 bits in total. A graphics card/GPU with four 4-Hello HBM stacks would due to this fact have a memory bus with a width of 4096 bits. In comparison, the bus width of GDDR recollections is 32 bits, with 16 channels for a graphics card with a 512-bit [Memory Wave Method](https://gitea.4gunn.cn:52443/tawannabohm52) interface. HBM supports up to 4 GB per package deal. The bigger number of connections to the memory, relative to DDR4 or GDDR5, required a new method of connecting the HBM memory to the GPU (or different processor). AMD and Nvidia have each used function-constructed silicon chips, referred to as interposers, to attach the [Memory Wave](http://gitlab.dev.jtyjy.com/spencer9212626) and GPU. This interposer has the added benefit of requiring the [Memory Wave](http://newslabx.csie.ntu.edu.tw:3000/elva6431576225) and processor to be bodily close, lowering memory paths. Nevertheless, as semiconductor device fabrication is considerably costlier than printed circuit board manufacture, this adds cost to the ultimate product.<br>[en-us-thememorywave.com](https://en-us-thememorywave.com/)
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<br>The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into unbiased channels. The channels are utterly impartial of each other and are usually not necessarily synchronous to one another. The HBM DRAM makes use of a wide-interface architecture to attain excessive-velocity, low-power operation. Every channel interface maintains a 128-bit information bus working at double information fee (DDR). HBM helps switch charges of 1 GT/s per pin (transferring 1 bit), yielding an overall package bandwidth of 128 GB/s. The second technology of Excessive Bandwidth Memory, HBM2, also specifies as much as eight dies per stack and doubles pin transfer charges as much as 2 GT/s. Retaining 1024-bit huge entry, HBM2 is ready to succeed in 256 GB/s memory bandwidth per bundle. The HBM2 spec allows up to eight GB per bundle. HBM2 is predicted to be especially useful for performance-delicate consumer applications similar to virtual actuality. On January 19, 2016, Samsung introduced early mass manufacturing of HBM2, at up to 8 GB per stack.<br>
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<br>In late 2018, JEDEC introduced an replace to the HBM2 specification, offering for increased bandwidth and capacities. Up to 307 GB/s per stack (2.5 Tbit/s effective information price) is now supported within the official specification, though products working at this velocity had already been accessible. Additionally, the replace added help for 12-Hi stacks (12 dies) making capacities of as much as 24 GB per stack potential. On March 20, 2019, Samsung announced their Flashbolt HBM2E, featuring eight dies per stack, a switch charge of 3.2 GT/s, providing a total of 16 GB and 410 GB/s per stack. August 12, 2019, SK Hynix announced their HBM2E, featuring eight dies per stack, a switch rate of 3.6 GT/s, offering a complete of sixteen GB and 460 GB/s per stack. On July 2, 2020, SK Hynix introduced that mass production has begun. In October 2019, Samsung announced their 12-layered HBM2E. In late 2020, Micron unveiled that the HBM2E normal could be updated and [Memory Wave Method](https://koessler-lehrerlexikon.ub.uni-giessen.de/wiki/Benutzer:ClaritaHoke438) alongside that they unveiled the subsequent commonplace generally known as HBMnext (later renamed to HBM3).<br>
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